Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs

Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2 ) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negati...

Quantum Capacitance in Scaled-Down III-V FETs

We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices,...

Quantum capacitance in scaled down III-V FETs Citation

We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices,...

Electrochemical capacitance of a leaky nanocapacitor

Work Function Engineering of Graphene

Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wid...